bys11-90 and bys11-100 vishay semiconductors 0.157 (3.99) 0.177 (4.50) 0.006 (0.152) 0.012 (0.305) 0.030 (0.76) 0.060 (1.52) 0.008 (0.203) max. 0.194 (4.93) 0.208 (5.28) 0.100 (2.54) 0.110 (2.79) 0.078 (1.98) 0.090 (2.29) 0.049 (1.25) 0.065 (1.65) cathode band features ?low power loss, high efficiency ?low profile surface mount package ?built-in strain relief ?very low switching losses ?low reverse current ?high surge capability ?guardring for overvoltage protection ?plastic package has underwriters laboratory flammability classification 94v-0 0.094 max. (2.38 max.) 0.220 (5.58) ref 0.066 min. (1.68 min.) 0.052 min. (1.32 min.) mounting pad layout do-214ac (sma) mechanical data case: jedec do-214ac molded plastic body terminals: solder plated, solderable per mil-std-750, method 2026 high temperature soldering guaranteed: 250?/10 seconds at terminals polarity: color band denotes cathode end weight: 0.002oz., 0.064g reverse voltage 90 to 100v forward current 1.0a extended voltage range dimensions in inches and (millimeters) schottky barrier rectifiers maximum ratings and thermal characteristics (t a = 25? unless otherwise noted) parameter symbol bys11-90 bys11-100 unit device marking code bys bys 109 110 maximum repetitive peak reverse voltage v rrm 90 100 v maximum average forward rectified current i f(av) 1.5 a peak forward surge current single half at 8.3ms i fsm 40 a sine-wave superimposed on rated load at 10ms 30 150 (1) maximum thermal resistance ?junction ambient r ja 125 (2) ?/w 100 (3) voltage rate of change (v r ) dv/dt 10,000 v/ s junction and storage temperature range t j , t stg 55 to +150 ? electrical characteristics (t a = 25? unless otherwise noted) maximum instantaneous forward voltage at 1a (4) v f 750 mv maximum dc reverse current t j = 25? 100 a at v rrm (4) t j = 100? i r 1ma notes: (1) mounted on epoxy-glass hard tissue (2) mounted on epoxy-glass hard tissue, 50 mm 2 35 m cu (3) mounted on al-oxide-ceramic (al 2 o 3 ), 50 mm 2 35 m cu (4) pulse test: 300 s pulse width, 1% duty cycle document number 86014 www.vishay.com 15-jan-04 1
fig. 4 ?reverse current vs. junction temperature i r -- reverse current (ma) t j -- junctiontemperature ( c) p r -- max. reverse power dissipation (w) t j -- junctiontemperature ( c) t amb -- ambient temperature ( c) fig. 5 ?max. reverse power dissipation vs. junction temperature fig. 1 ?forward current vs. forward voltage fig. 3 ?max. average forward current vs. ambient temperature i f -- forward current (a) v f -- forward voltage (v) t amb -- ambient temperature ( c) i fav -- average forward current (a) v r -- reverse voltage (v) c d -- diode capacitance (pf) fig. 6 ?diode capacitance vs. reverse voltage i fav -- average forward current (a) fig. 2 ?max. average forward current vs. ambient temperature 0.001 0.010 0.100 1.000 10.000 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 0.0 0.4 0.8 1.2 1.6 2.0 0 40 80 120 160 200 0 0 0.4 0.8 1.2 1.6 2.0 40 80 120 160 200 0.1 1 10 100 1000 0 40 80 120 160 200 0 0.4 0.8 1.2 1.6 2.0 0 40 80 120 160 200 0 20 40 60 80 100 120 140 160 180 0.1 1.0 10.0 100.0 f=1mhz v r = v rrm t j = 150 c t j = 25 c v r = v rrm , half sinewave, r thja = 25k/w v r = 0 v, half sinewave r thja = 25k/w 150k/w 125k/w 100k/w v r = v rrm r thja = 25k/w 100k/w ratings and characteristic curves (t a = 25? unless otherwise noted) bys11-90 and bys11-100 vishay semiconductors www.vishay.com document number 86014 2 15-jan-04
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